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US Patent Issued to Microsemi SoC on Oct. 6 for "CMOS memory cell for high voltage applications" (California Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,777, issued on Oct. 6, was assigned to Microsemi SoC Corp. (Chandler, Ariz.). "CMOS memory cell for high voltage applications" was invented ... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Memory circuits with keeper circuits and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,778, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory circuits with keeper circuits ... Read More


US Patent Issued to Media Tek Singapore on Oct. 6 for "Low power read circuit for multi-bank memory" (Indian, American Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,779, issued on Oct. 6, was assigned to Media Tek Singapore Pte. Ltd. (Singapore). "Low power read circuit for multi-bank memory" was invente... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Memory devices with RC tracking and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,780, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory devices with RC tracking and m... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,781, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device" was invented by Shih-L... Read More


US Patent Issued to SK HYINX on Oct. 6 for "Semiconductor device including ferroelectric memory cell with doped ferroelectric layer" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,782, issued on Oct. 6, was assigned to SK HYINX INC. (Icheon-si, South Korea). "Semiconductor device including ferroelectric memory cell wit... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 6 for "System and method applied with computing-in-memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,783, issued on Oct. 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "System and method applied with co... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Oct. 6 for "Memory devices for implementing read operation of bidirectional selector only memory (SOM) cells" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,784, issued on Oct. 6, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Memory devices for implementing read operation... Read More


US Patent Issued to Kioxia on Oct. 6 for "Storage device and method of controlling storage device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,785, issued on Oct. 6, was assigned to Kioxia Corp. (Tokyo). "Storage device and method of controlling storage device" was invented by Danda... Read More


US Patent Issued to XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE on Oct. 6 for "Method and apparatus for initializing resistive random access memory and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,786, issued on Oct. 6, was assigned to XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE Co. LTD. (Xiamen, China). "Method and apparatus for i... Read More